Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

We report on investigations of optical generation of carriers in Si nanocrystals embedded in SiO2 matrix by time-resolved induced absorption technique. Results obtained for excitation below and above twice the bandgap energy h??<?2Eg and h??>?2Eg show very similar decay characteristics (within ?resolution ? 100 fs). When intensity of the signal...

Evaluation of an Empirical Model to Estimate and Optimize Mechanical Properties of PECVD SiC Films

In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si...

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with...