Kang, Xuanwu (author), Sun, Y. (author), Zheng, Yingkui (author), Wei, Ke (author), Wu, Hao (author), Zhao, Yuanyuan (author), Liu, Xinyu (author), Zhang, Kouchi (author) In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON...
journal article 2021
