High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin pure-boron-layer coverage of the anode surface, PureB...

Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we...