A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...

A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...

Fluorescence lifetime biosensing with DNA microarrays and a CMOS-SPAD imager

Fluorescence lifetime of dye molecules is a sensitive reporter on local microenvironment which is generally independent of fluorophores concentration and can be used as a means of discrimination between molecules with spectrally overlapping emission. It is therefore a potentially powerful multiplexed detection modality in biosensing but requires...

Real-time fluorescence lifetime imaging system with a 32 × 32 0.13?m CMOS low dark-count single-photon avalanche diode array

A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13?m CMOS singlephoton avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called ‘Integration for Extraction Method’ (IEM) [J....