Quasi-2D Hybrid Perovskite Formation Using Benzothieno[3,2-b]Benzothiophene (BTBT) Ammonium Cations: Substantial Cesium Lead(II) Iodide Black Phase Stabilization

3D hybrid perovskites (APbX₃) have made a significant impact on the field of optoelectronic materials due to their excellent performance combined with facile solution deposition and up-scalable device fabrication. Nonetheless, these materials suffer from environmental instability. To increase material stability, the organic cation ...

Time of Flight in Perspective: Instrumental and Computational Aspects of Time Resolution in Positron Emission Tomography

The first time-of-flight positron emission tomography (TOF-PET) scanners were developed as early as in the 1980s. However, the poor light output and low detection efficiency of TOF-capable detectors available at the time limited any gain in image quality achieved with these TOF-PET scanners over the traditional non-TOF PET scanners. The...

Design of broadband high-efficiency superconducting-nanowire single photon detectors

In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO₂ layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an...

A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...

Architecture and applications of a high resolution gated SPAD image sensor

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....

Measurement and modeling of microlenses fabricated on single-photon avalanche diode arrays for fill factor recovery

Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger...

On-chip filter bank spectroscopy at 600–700?GHz using NbTiN superconducting resonators

We experimentally demonstrate the principle of an on-chip submillimeter wave filter bank spectrometer, using superconducting microresonators as narrow band-separation filters. The filters are made of NbTiN/SiNx/NbTiN microstrip line resonators, which have a resonance frequency in the range of 614-685?GHz, two orders of magnitude higher in...

Single quantum dot nanowire photodetectors

We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. With excitation above the InP band gap, the nanowire photodetectors are efficient (quantum efficiency of 4%). Under resonant excitation of the quantum dot, the photocurrent amplitude depends on the linear polarization direction of the incident light...

Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam

We report a method to measure the electric energy density of longitudinal and transverse electric field components of strongly focused polarized laser beams. We used a quantum well photodetector and exploited the polarization dependent optical transitions of light holes and heavy holes to probe the electric field distribution in the focal region...