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Zhang, Wenliang (author), Zhao, Qinghua (author), Munuera, Carmen (author), Lee, M. (author), Flores, Eduardo (author), van der Zant, H.S.J. (author), Wang, Tao (author), Frisenda, Riccardo (author), Castellanos-Gomez, Andres (author)Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional...journal article 2021
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Azpeitia, Jon (author), Frisenda, Riccardo (author), Lee, M. (author), Bouwmeester, D. (author), Zhang, Wenliang (author), Mompean, Federico (author), van der Zant, H.S.J. (author), Garcia-Hernandez, Mar (author), Castellanos-Gomez, Andres (author)Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific...journal article 2021
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Lee, M. (author), Mazaheri, Ali (author), van der Zant, H.S.J. (author), Frisenda, Riccardo (author), Castellanos-Gomez, Andres (author)Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected...journal article 2020
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Ghasemi, Foad (author), Frisenda, Riccardo (author), Flores, Eduardo (author), Papadopoulos, N. (author), Biele, Robert (author), de Lara, David Perez (author), van der Zant, H.S.J. (author), Watanabe, Kenji (author), Castellanos-Gomez, Andres (author)In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled...journal article 2020
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Mishra, K. K. (author), Ravindran, T. R. (author), Island, J.O. (author), Flores, Eduardo (author), Ares, Jose Ramon (author), Sanchez, Carlos (author), Ferrer, Isabel J. (author), van der Zant, H.S.J. (author), Castellanos-Gomez, Andres (author)Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide ...journal article 2020
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Papadopoulos, N. (author), Flores, Eduardo (author), Watanabe, Kenji (author), Taniguchi, Takashi (author), Ares, Jose R. (author), Sanchez, Carlos (author), Ferrer, Isabel J. (author), Castellanos-Gomez, Andres (author), Steele, G.A. (author), van der Zant, H.S.J. (author)We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS<sub>3</sub>) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...journal article 2019
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Hsu, C. (author), Frisenda, Riccardo (author), Schmidt, Robert (author), Arora, Ashish (author), de Vasconcellos, Steffen Michaelis (author), Bratschitsch, Rudolf (author), van der Zant, H.S.J. (author), Castellanos-Gomez, Andres (author)An interesting aspect of 2D materials is the change of their electronic structure with the reduction of thickness. Molybdenum and tungsten-based transition metal dichalcogenides form an important family of 2D materials, whose members show a thickness-dependent bandgap and strong light–matter interaction. In this work, the experimental...journal article 2019
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Frisenda, Riccardo (author), Molina-Mendoza, Aday J. (author), Mueller, Thomas (author), Castellanos-Gomez, Andres (author), van der Zant, H.S.J. (author)Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p–n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p–n junction device architectures, not possible with conventional bulk semiconductors. In...journal article 2018
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Papadopoulos, N. (author), Frisenda, Riccardo (author), Biele, Robert (author), Flores, Eduardo (author), Ares, Jose R. (author), Sánchez, Carlos (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), D'Agosta, Roberto (author), Castellanos-Gomez, Andres (author)TiS<sub>3</sub> nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS<sub>3</sub> is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study...journal article 2018
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Bosman, S.J. (author), Gely, M.F. (author), Singh, Vibhor (author), Bothner, D. (author), Castellanos-Gomez, Andres (author), Steele, G.A. (author)In this experiment, we couple a superconducting transmon qubit to a high-impedance 645Ω microwave resonator. Doing so leads to a large qubit-resonator coupling rate g, measured through a large vacuum Rabi splitting of 2g≃910 MHz. The coupling is a significant fraction of the qubit and resonator oscillation frequencies ω, placing our system...journal article 2017
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Molina-Mendoza, Aday J. (author), Island, J.O. (author), Paz, Wendel S. (author), Clamagirand, Jose Manuel (author), Ares, Jose Ramón (author), Flores, Eduardo (author), Leardini, Fabrice (author), Sánchez, Carlos (author), Agraït, Nicolás (author), Rubio-Bollinger, Gabino (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), Palacios, JJ (author), Castellanos-Gomez, Andres (author)The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...journal article 2017
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Molina-Mendoza, Aday J. (author), Giovanelli, Emerson (author), Paz, Wendel S. (author), Ninõ, Miguel Angel (author), Island, J.O. (author), Evangeli, Charalambos (author), Aballe, Luciá (author), Foerster, Michael (author), van der Zant, H.S.J. (author), Rubio-Bollinger, Gabino (author), Agraït, Nicolás (author), Palacios, JJ (author), Pérez, Emilio M. (author), Castellanos-Gomez, Andres (author)The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control...journal article 2017
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Island, J.O. (author), Kuc, A. (author), Diependaal, E.H. (author), Bratschitsch, R. (author), Van der Zant, H.S.J. (author), Heine, T. (author), Castellanos-Gomez, A. (author)We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap...journal article 2016
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Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...journal article 2015
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Cartamil Bueno, S.J. (author), Steeneken, P.G. (author), Tichelaar, F.D. (author), Navarro Moratalla, E. (author), Venstra, W.J. (author), Leeuwen, R. (author), Coronado, E. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author), Castellanos-Gomez, A. (author)Controlling the strain in two-dimensional (2D) materials is an interesting avenue to tailor the mechanical properties of nanoelectromechanical systems. Here, we demonstrate a technique to fabricate ultrathin tantalum oxide nanomechanical resonators with large stress by the laser oxidation of nano-drumhead resonators composed of tantalum...journal article 2015
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Seshan, V. (author), Ullien, D. (author), Castellanos-Gomez, A. (author), Sachdeva, S. (author), Murthy, D.H.K. (author), Savenije, T.J. (author), Ahmad, H.A. (author), Nunney, T.S. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Van der Zant, H.S.J. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at ?850?°C. The films were extensively evaluated by...journal article 2013
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Seshan, V. (author), Arroyo, C.R. (author), Castellanos-Gomez, A. (author), Prins, F. (author), Perrin, M.L. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author), Van der Zant, H.S.J. (author), Dulic, D. (author)A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ?1?nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport...journal article 2012
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Rubio-Bollinger, G. (author), Castellanos-Gomez, A. (author), Bilan, S. (author), Zotti, L.A. (author), Arroyo, C.R. (author), Agraït, N. (author), Cuevas, J. (author)We fabricate and characterize carbon-fiber tips for their use in combined scanning tunneling and force microscopy based on piezoelectric quartz tuning fork force sensors. An electrochemical fabrication procedure to etch the tips is used to yield reproducible sub-100-nm apex. We also study electron transport through singlemolecule junctions...journal article 2012
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Castellanos-Gomez, A. (author), Poot, M. (author), Steele, G.A. (author), Van der Zant, H.S.J. (author), Agrait, N. (author), Rubio-Bollinger, G. (author)We fabricate freely suspended nanosheets of molybdenum disulphide (MoS2) which are characterized by quantitative optical microscopy and high-resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young’s modulus and the initial pretension of the...journal article 2012