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Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...
journal article 2021