Wu, Huan (author), Luo, Houcai (author), Zhang, Jingping (author), Zheng, Bofeng (author), Lang, Lei (author), Wang, Zeping (author), Zhang, Kouchi (author), Chen, Xianping (author) To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...
journal article 2023
