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Yun, Minghui (author), Cai, Miao (author), Yang, Daoguo (author), Yang, Yiren (author), Xiao, Jing (author), Zhang, Kouchi (author)Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation...journal article 2022