Device operation of P-ion-implanted n-BaSi₂/p-Si heterojunction solar cells

We formed phosphorous(P)-ion-implanted n-BaSi₂ films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi₂/p-Si heterojunction under AM1.5 illumination. The BaSi₂ films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi₂ films using PF<sub...

Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

In this work, we develop SiO_x/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...

On the effects of implantation temperature in helium implanted silicon

He+ ions were implanted into silicon with a fluence of 5×10 16?cm?2 at different temperatures ranging from 473 to 1073 K. Samples were analyzed by thermal helium desorption spectroscopy and by transmission electron microscopy. As far as cavity formation is concerned, the behavior can be divided into three stages depending on the implantation...