Fabrication of Nanoslits with <111> Etching TSWE Method

In this paper, we report a modified three step anisotropic wet etching (TSWE) method to fabricate solid-state silicon nanoslits. The slit-opening process is performed by &lt;111&gt; crystal plane etching. The etching rate of the &lt;111&gt; crystal plane is reasonably slow as it is only 1/45 of the &lt;100&gt; etching rate, thus allowing and...

Observations and numerical simulations of unsteady partial cavitation on 2-D hydrofoil

Steady analysis of viscous flow around ducted propellers: Validation and study on scale effects