Searched for: +
(1 - 3 of 3)
document
Yang, Huiru (author), Li, Junfeng (author), Shao, Ziyuan (author), Tan, C. (author), Gao, Chenshan (author), Cui, Hongyuan (author), Tang, Xiaosheng (author), Liu, Yufei (author), Zhang, Kouchi (author), Ye, H. (author)
The development of high-performance gas sensing materials is one of the development trends of new gas sensor technology. In this work, in order to predict the gas-sensitive characteristics of HfSe<sub>2</sub> and its potential as a gas-sensitive material, the interactions of nonmetallic element (O, S, Te) doped HfSe<sub>2</sub> monolayer and...
journal article 2022
document
Cai, Miao (author), Cui, Peng (author), Qin, Yikang (author), Geng, Daoshuang (author), Wei, Qiqin (author), Wang, Xiyou (author), Yang, Daoguo (author), Zhang, Kouchi (author)
Understanding the defect characterization of electronic and mechanical components is a crucial step in diagnosing component lifetime. Technologies for determining reliability, such as thermal modeling, cohesion modeling, statistical distribution, and entropy generation analysis, have been developed widely. Defect analysis based on the...
review 2020
document
Cui, Z. (author), Zhang, Yingying (author), Yang, Qun (author), Zhang, Kouchi (author), Chen, Xianping (author)
Interfacial properties of Cu/SiO<sub>2</sub> in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO<sub>2</sub>. The...
conference paper 2018