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Liu, Ke (author), Tan, C. (author), Li, Shizhen (author), Yuan, Wucheng (author), Liu, X. (author), Zhang, Kouchi (author), French, P.J. (author), Ye, H. (author), Wang, S. (author)
This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...
journal article 2023
document
Wang, S. (author), Tan, Yanlong (author), Liu, Xu (author), Li, Shizhen (author), Liu, Ke (author), Yuan, Wucheng (author), Li, Tao (author), Zhang, Kouchi (author), French, P.J. (author), Ye, Huaiyu (author), Tan, Chunjian (author)
In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...
conference paper 2023