A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...