Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect...

Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...

A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...

Indentation hardness, plasticity and initial creep properties of nanosilver sintered joint

The nanoindentation test was conducted in this paper to investigate the indentation hardness, plasticity and initial creep properties of pressure sintered nanosilver joint at various test temperatures. The effects of strain rate on the indentation hardness were first investigated. Then yield stress of nanosilver sintered joint was studied in...

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...

Effects of sintering pressure on the densification and mechanical properties of nanosilver double side sintered power module

Modern power electronics has the increased demands in current density and high-temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received...

Stress analysis of pressure-assisted sintering for the double-side assembly of power module

Purpose: Crack and stress distribution on dies are key issues for the pressure-assisted sintering bonding of power modules. The purpose of this research is to build a relationship among stress distributions, sintering sequences and sintering pressures during the sintering processes. Design/methodology/approach: Three sintering sequences, S(a)...

Suspended tungsten trioxide (WO₃) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

A suspended WO₃-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...

Effect of Sintering Pressure on the Porosity and the Shear Strength of the Pressure-Assisted Silver Sintering Bonding

The microstructure, thickness, porosity, and shear performance of the silver (Ag) sintering layers under different sintering pressures were investigated. Experimental results demonstrated that the thickness and the porosity of the sintering layer decreased when the sintering pressure varied from 5 MPa to 30 MPa. This densification phenomenon...

A new hermetic sealing method for ceramic package using nanosilver sintering technology

High reliable packaging materials are needed for electronics when they work at harsh environments. Among which, the nanosilver material has been widely studied and applied in power electronics due to its low processing temperature and high reliability. This paper investigates the bonding properties of nanosilver sintered hermetic cavity. There...