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Cem Gursoy, Cemil (author), Kraak, D.H.P. (author), Ahmed, Foisal (author), Taouil, M. (author), Jenihhin, Maksim (author), Hamdioui, S. (author)
Memory designs require timing margins to compensate for aging and fabrication process variations. With technology downscaling, aging mechanisms became more apparent, and larger margins are considered necessary. This, in return, means a larger area requirement and lower performance for the memory. Bias Temperature Instability (BTI) is one of the...
conference paper 2022
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Balakrishnan, Aneesh (author), Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Hamdioui, S. (author), Jenihhin, Maksim (author), Alexandrescu, Dan (author)
The Soft-Error (SE) reliability and the effects of Negative Bias Temperature Instability (NBTI) in deep submicron technologies are characterized as the major critical issues of high-performance integrated circuits. The previous scientific research studies provide a comprehensive description that the soft-error vulnerability becomes more severe...
conference paper 2021
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Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Wu, L. (author), Fieback, M. (author), Jenihhin, Maksim (author), Taouil, M. (author), Hamdioui, S. (author)
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of...
conference paper 2020