Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...

Interface chemistry of an amide electrolyte for highly reversible lithium metal batteries

Metallic lithium is a promising anode to increase the energy density of rechargeable lithium batteries. Despite extensive efforts, detrimental reactivity of lithium metal with electrolytes and uncontrolled dendrite growth remain challenging interconnected issues hindering highly reversible Li-metal batteries. Herein, we report a rationally...

Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...

Current and future trends in topology optimization for additive manufacturing

Manufacturing-oriented topology optimization has been extensively studied the past two decades, in particular for the conventional manufacturing methods, for example, machining and injection molding or casting. Both design and manufacturing engineers have benefited from these efforts because of the close-to-optimal and friendly-to-manufacture...