Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

In this work, 4H-SiC homoepitaxial layers were grown on 4°off-axis substrates at different susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different susceptor rotation speed on the quality of 4H-SiC epitaxial layers in terms of thickness, thickness uniformity, crystallinity, surface morphology and...

Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using...