Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

In this work, 4H-SiC homoepitaxial layers were grown on 4°off-axis substrates at different susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different susceptor rotation speed on the quality of 4H-SiC epitaxial layers in terms of thickness, thickness uniformity, crystallinity, surface morphology and...