Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance

Metal-oxide-semiconductor field-effect transistors (MOSFETs) undergo fatigue degradation under high thermal and electrical stresses. This process results in changes in their parasitic parameters, which can be detected using frequency domain reflectometry (FDR). Frequency domain impedance analysis is employed to characterize the various...