Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs

The development of Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) mass production requires high-quality test solutions. Accurate and appropriate fault modeling is crucial for the realization of such solutions. This paper targets fault modeling and test generation for all interconnect and contact defects in STT-MRAMs and shows that using the...

Device Aware Diagnosis for Unique Defects in STT-MRAMs

Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization. However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging due to the existence of unique defects in Magnetic Tunneling Junctions (MTJs). Recently, the Device-Aware Test (DA-Test) method has been put forward as an effective...

CIM-based Robust Logic Accelerator using 28 nm STT-MRAM Characterization Chip Tape-out

Spin-transfer torque magnetic random access memory (STT-MRAM) based computation-in-memory (CIM) architectures have shown great prospects for an energy-efficient computing. However, device variations and non-idealities narrow down the sensing margin that severely impacts the computing accuracy. In this work, we propose an adaptive referencing...

Special Session: STT-MRAMs: Technology, Design and Test

STT-MRAM has long been a promising non-volatile memory solution for the embedded application space owing to its attractive characteristics such as non-volatility, low leakage, high endurance, and scalability. However, the operating requirements for high-performance computing (HPC) and low power (LP) applications involve different challenges....

PVT Analysis for RRAM and STT-MRAM-based Logic Computation-in-Memory

Emerging non-volatile resistive memories like Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) and Resistive RAM (RRAM) are in the focus of today’s research. They offer promising alternative computing architectures such as computation-in-memory (CiM) to reduce the transfer overhead between CPU and memory, usually referred to as the...

Impact of Magnetic Coupling and Density on STT-MRAM Performance

As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytically for STT-MRAMs and investigates their impact on the write performance and retention of MTJ devices, which are the data-storing elements of STT-MRAMs. We present...