Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect...

Erratum: Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)

The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does...

Temporal Network Prediction and Interpretation

Temporal networks refer to networks like physical contact networks whose topology changes over time. Predicting future temporal network is crucial e.g., to forecast the epidemics. Existing prediction methods are either relatively accurate but black-box, or white-box but less accurate. The lack of interpretable and accurate prediction methods...

Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Recent research focusing on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector varies depending on the photosensitive materials used and the device structure. We demonstrated a TiO₂...

A high responsivity and controllable recovery ultraviolet detector based on a WO₃gate AlGaN/GaN heterostructure with an integrated micro-heater

A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO₃) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO₃nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...

Suspended tungsten trioxide (WO₃) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater

A suspended WO₃-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...