Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....

High performance mixed potential type No₂ gas sensor based on porous YSZ layer formed with graphite doping

High performance mixed potential type NO₂ sensors using porous yttria-stabilized zirconia (YSZ) layers doped with different concentration graphite as solid electrolyte and LaFeO₃ as sensing electrode were fabricated and characterized. LaFeO₃ was prepared by a typical citrate sol–gel method and characterized...