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Zhan, Teng (author), Sun, Jianwen (author), Feng, Tao (author), Zhang, Yulong (author), Zhou, Binru (author), Zhang, Banghong (author), Wang, Junxi (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does...journal article 2023
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Zhan, Teng (author), Sun, J. (author), Feng, Tao (author), Zhang, Yulong (author), Zhou, Binru (author), Zhang, Banghong (author), Wang, Junxi (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)Recent research focusing on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector varies depending on the photosensitive materials used and the device structure. We demonstrated a TiO<sub>2</sub>...journal article 2022
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Sun, J. (author), Zhang, Shuo (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Li, Jinmin (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO<sub>3</sub>) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO<sub>3</sub>nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...journal article 2020
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...journal article 2019
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)A suspended WO<sub>3</sub>-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...journal article 2019
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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...journal article 2018
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Santagata, F. (author), Sun, J. (author), Iervolino, E. (author), Yu, H. (author), Wang, F. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author), Zhang, Guoyi (author)Purpose: The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked silicon submount technology. As demonstrators, a smart lighting module and a sensor systems were successfully developed by using the fabrication and assembly process described in this paper. Design...journal article 2018
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Sokolovskij, R. (author), Iervolino, E. (author), Zhao, Changhui (author), Wang, F. (author), Yu, Hongyu (author), Santagata, F. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W<sub>g</sub>/L<sub>g</sub> from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...conference paper 2017