Sun, Y. (author), Kang, Xuanwu (author), Zheng, Yingkui (author), Wei, Ke (author), Li, Pengfei (author), Wang, Wenbo (author), Liu, Xinyu (author), Zhang, Kouchi (author) The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...
journal article 2020
