Wang, S. (author), Tan, Yanlong (author), Liu, Xu (author), Li, Shizhen (author), Liu, Ke (author), Yuan, Wucheng (author), Li, Tao (author), Zhang, Kouchi (author), French, P.J. (author), Ye, Huaiyu (author), Tan, Chunjian (author) In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...
conference paper 2023
