Double-sided heat dissipation numerical modeling of an embedded half-bridge power module with multiple chips

Thermal management has always played a significant role in power module design. Double-sided heat dissipation is more efficient at transferring heat than the traditional package. Although there are several thermal modeling approaches to power modules, the application of the numerical models, which are computationally fast and accurate, has...

A 155W −95.6 dB THD+N GaN-based Class-D Audio Amplifier With LC Filter Nonlinearity Compensation

Silicon MOSFETs-based medium-power (< 50W) Class-D amplifiers (CDAs) switching in the MHz range have gained popularity in recent years, which achieves better linearity thanks to a higher loop gain in the audio band while enabling the use of LC filters with higher cut-off frequencies. However, for high-power (>100 W) CDAs, such switching...

Thermal-mechanical-electrical Co-design of Fan-Out Panel-Level SiC MOSFET Packaging with a Multi-objective Optimization Algorithm

As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this...

Hydrolysis Mechanism Analysis of (Ca, Sr)AlSiN₃:Eu²⁺ Red Phosphor Aged Under Pressure Cooker Test and 85°C&85%RH Test: Kinetics Modeling and First-principles Calculation

The (Ca, Sr) AlSiN₃:Eu²⁺(CSASN:Eu) red phosphor is widely used to improve color rendering of high-power phosphor-converted lighting diode (pc-WLED), but it is always unstable under high temperature and high humidity environments. Therefore, the studies on the temperature and humidity resistance of red phosphors and their aging mechanism have...

Genetic Algorithm–Assisted Design of Redistribution Layer Vias for a Fan-Out Panel-Level SiC MOSFET Power Module Packaging

A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management...

Dynamic mechanical analysis of (Ca,Sr)AlSiN3: Eu2+ phosphor/silicone composites aged under the temperature–humidity–sulfur coupled condition

As a core packaging material of light color conversion, phosphor/silicone composite plays an indispensable role in light emitting diode (LED) packaging. At present, commercial LED packages mainly use blue LED chips to stimulate Yttrium Aluminum Garnet (YAG) yellow phosphor to reach a white color. However, (Ca,Sr)AlSiN 3 :Eu 2+ (CSASN) red...

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In...