Combined Fabrication and Performance Evaluation of TOPCon Back-Contact Solar Cells with Lateral Power Metal-Oxide-Semiconductor Field-Effect Transistors on a Single Substrate

Nowadays, an increasing share of photovoltaic (PV) systems makes use of module- or submodule-level power electronics (PE). Furthermore, PE is used in stand-alone devices powered by PV-storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein...

Bond Wire Damage Detection Method on Discrete MOSFETs Based on Two-Port Network Measurement

Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation...

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...