Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...