Gate Driver Design for 1.2 kV SiC Module with PCB Integrated Rogowski Coil Protection Circuit

Wide band-gap materials, e.g., Silicon Carbide (SiC), allow the realization of power semiconductor with superior performance with respect to the traditional Si-based counterparts. On the other hand they require more stringent short-circuit or over-current clearing time to safeguard the device lifetime. This paper focuses on the analysis, design...