A BJT-Based CMOS Temperature Sensor with Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy from -40 °c to 125 °c

This brief presents a 0.65% relative inaccuracy CMOS temperature sensor with a duty-cycle-modulated (DCM) output. It uses a BJT-based front-end to generate a proportional to absolute temperature voltage (V_{PTAT}) and a complementary to absolute temperature voltage (V_{CTAT}), which are then modulated to a digital-friendly duty-cycle output....

An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using a separate CBD front-end and ADC, a new architecture is proposed in which the CBD front-end is directly embedded into the 1st stage of a 1...

A 5800-μm² Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) from -50 °c to 105 °c in 65-nm CMOS

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor,fabricated in 65-nm CMOS,occupies 5800 μm²...

A 5800-μ m ₂Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and...

A 6800-μ m² Resistor-Based Temperature Sensor with ±0.35 °c (3σ) Inaccuracy in 180-nm CMOS

This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μ m², thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small...

A Resistor-Based Temperature Sensor With a 0.13 pJ·K² Resolution FoM

This paper describes a high-resolution energy-efficient CMOS temperature sensor, intended for the temperature compensation of MEMS/quartz frequency references. The sensor is based on silicided poly-silicon thermistors, which are embedded in a Wien-bridge RC filter. When driven at a fixed frequency, the filter exhibits a temperature-dependent...

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS

This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be...

An Accurate BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output

This paper describes the design of a precision bipolar junction transistor based temperature sensor implemented in standard 0.7-μmCMOS technology. It employs substrate p-n-ps as sensing elements,which makes it insensitive<br/>to the effects of mechanical (packaging) stress and facilitates the use of low-cost packaging technologies. The sensor...