Enhancing performance of polar InGaN-based thin film solar cells through intrinsic layer impact optimization: Numerical modeling

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to...