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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...
journal article 2018
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Yang, Chenyang (author), Sun, Jianwen (author), Zhang, Yulong (author), Tang, Jingya (author), Liu, Zizheng (author), Zhan, Teng (author), Wang, Dian-Bing (author), Zhang, Kouchi (author), Liu, Zewen (author), Zhang, Xian-En (author)
The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect...
journal article 2024