Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique

Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....

Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions

The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect...