Controlling P and B diffusion during polysilicon formation

High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiO_x) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the...