Highly-conformal sputtered through-silicon vias with sharp superconducting transition

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up...

Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm...

Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter. The low electrical resistivity achieved without sintering, its...

High-performance, Cost-effective 3D Stacked Wide-Operand Adders

Through-Silicon Vias (TSV) based 3D Stacked IC (3D-SIC) technology introduces new design opportunities for wide operand width addition units. Different from state of the art direct folding proposals we introduce two cost-effective 3D Stacked Hybrid Adders with identical tier structure, which potentially makes the manufacturing of hardware wide...