Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cells

Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have...

Theoretical evaluation of contact stack for high efficiency IBC-SHJ solar cells

In this work we present a theoretical analysis of charge carriers transport mechanisms in IBC-SHJ solar cells. The concepts of contact and transport selectivity are correlated through the band bending at c-Si interface and are used to identify thin-film silicon parameters affecting fill factor (FF) and open-circuit voltage (V_OC)....

High-efficiency black IBC c-Si solar cells with poly-Si as carrier-selective passivating contacts

In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...

Doped hydrogenated nanocrystalline silicon oxide layers for high-efficiency c-Si heterojunction solar cells

Hydrogenated nanocrystalline silicon oxide (nc-SiO_x:H) layers exhibit promising optoelectrical properties for carrier-selective-contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c-Si) passivation quality is technologically challenging for growing thin...

Implantation-based passivating contacts for crystalline silicon front/rear contacted solar cells

In this work, we develop SiO_x/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...

Optical characterization of poly-SiO_x and poly-SiC_x carrier-selective passivating contacts

The optical modelling for optimizing high-efficiency c-Si solar cells endowed with poly-SiO_x or poly-SiC_x carrier-selective passivating contacts (CSPCs) demands a thorough understanding of their optical properties, especially their absorption coefficient. Due to the mixed phase nature of these CSPCs, spectroscopic...

The role of heterointerfaces and subgap energy states on transport mechanisms in silicon heterojunction solar cells

The contact resistivity is a key parameter to reach high conversion efficiency in solar cells, especially in architectures based on the so-called carrier-selective contacts. The importance of contact resistivity relies on the evaluation of the quality of charge collection from the absorber bulk through adjacent electrodes. The electrode...

Controllable Simultaneous Bifacial Cu-Plating for High-Efficiency Crystalline Silicon Solar Cells

Bifacial (BF) copper-plated crystalline silicon solar cell is an attractive topic to concurrently reduce silver consumption and maintain good device performance. However, it is still challenging to realize a high aspect ratio (AR) of the metal fingers. Herein, a new type of hybrid-shaped Cu finger is electromagnetically fabricated in a BF...

High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Broadband transparent conductive oxide layers with high electron mobility (μ_e) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In₂O₃ thin films with high μ_e (>60 cm² V^-1 s^-1) have been extensively...

Front and rear contact Si solar cells combining high and low thermal budget Si passivating contacts

In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO_x hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...

Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiO _x/Poly-Si Passivating Contacts

In high-efficiency silicon solar cells featuring carrier-selective passivating contacts based on ultrathin SiOx/poly-Si, the appropriate implementation of transparent conductive oxide (TCO) layers is of vital importance. Considerable deterioration in passivation quality occurs for thin poly-Si-based devices owing to the sputtering damage...

High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:H

This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO ₃ which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts

This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical...