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Tan, H. (author), Sivec, L. (author), Yan, B. (author), Santbergen, R. (author), Zeman, M. (author), Smets, A.H.M. (author)We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...journal article 2013
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Seshan, V. (author), Ullien, D. (author), Castellanos-Gomez, A. (author), Sachdeva, S. (author), Murthy, D.H.K. (author), Savenije, T.J. (author), Ahmad, H.A. (author), Nunney, T.S. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Van der Zant, H.S.J. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at ?850?°C. The films were extensively evaluated by...journal article 2013
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De Rooij-Lohmann, V.I.T.A. (author), Veldhuizen, L.W. (author), Zoethout, E. (author), Yakshin, A.E. (author), Van de Kruijs, R.W.E. (author), Thijsse, B.J. (author), Gorgoi, M. (author), Schäfers, F. (author), Bijkerk, F. (author)To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer structures for extreme ultraviolet optics. Knowledge about the chemical interaction between B4C and Mo or Si, however is largely lacking. Therefore, the chemical processes during annealing up to 600?°C of a Mo/B4C/Si layered structure have been...journal article 2010
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Klaver, A. (author), Nádady, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...journal article 2006
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...journal article 2011
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...journal article 2009
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Shastin, V.N. (author), Zhukavin, R.K. (author), Orlova, E.E. (author), Pavlov, S.G. (author), Rümmeli, M.H. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Riemann, H. (author), Bradley, I.V. (author), Van der Meer, A.F.G. (author)Frequency-tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature while resonant pumping of odd parity impurity states. The threshold was about two orders of magnitude...journal article 2002
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...journal article 2010
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Sadeghian, H. (author), Yang, C.K. (author), Goosen, J.F.L. (author), Van der Drift, E. (author), Bossche, A. (author), French, P.J. (author), Van Keulen, F. (author)This letter presents the application of electrostatic pull-in instability to study the size-dependent effective Young’s Modulus ? ( ~170–70?GPa) of [110] silicon nanocantilevers (thickness ~1019–40?nm). The presented approach shows substantial advantages over the previous methods used for characterization of nanoelectromechanical systems...journal article 2009
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Van Oven, J.C. (author), Berwald, F. (author), Berggren, K.K. (author), Kruit, P. (author), Hagen, C.W. (author)This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...journal article 2011
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...journal article 2010
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Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...journal article 2010
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Zhukavin, R.K. (author), Shastin, V.N. (author), Pavlov, S.G. (author), Hübers, H.W. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Van der Meer, A.F.G. (author)Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the...journal article 2007
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Kessels, M.J.H. (author), Bijkerk, F. (author), Tichelaar, F.D. (author), Verhoeven, J. (author)We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to...journal article 2005
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Lazic, I. (author), Ikonic, Z. (author), Milanovic, V. (author), Kelsall, R.W. (author), Indjin, D. (author), Harrison, P. (author)An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization....journal article 2007
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Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal...journal article 2011
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)Ion-beam-induced deposition (IBID) is a powerful technique for prototyping three-dimensional nanostructures. To study its capability for this purpose, the authors investigate the proximity effect in IBID of nanopillars. In particular, the changes in shape and dimension of pillars are studied when a second pillar is grown near an existing pillar....journal article 2009
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Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...journal article 2013
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Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...journal article 2008
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Seshan, V. (author), Arroyo, C.R. (author), Castellanos-Gomez, A. (author), Prins, F. (author), Perrin, M.L. (author), Janssens, S.D. (author), Haenen, K. (author), Nesládek, M. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author), Van der Zant, H.S.J. (author), Dulic, D. (author)A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ?1?nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport...journal article 2012