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Zheng, Y.H. (author)
journal article 2004
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Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
journal article 2001
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Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
journal article 2001
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Mertes, K.M. (author), Zheng, H. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
journal article 2001
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Vitkalov, S.A. (author), Zheng, H. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value.
journal article 2000
document
Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
journal article 2000
document
Strous, M. (author), Van Gerven, E. (author), Zheng, P. (author), Kuenen, J.G. (author), Jetten, M.S.M. (author)
journal article 1997
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