- document
-
Sun, P. (author), Ishihara, R. (author), Charbon, E. (author)We proposed the world’s first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD...journal article 2016
- document
-
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...journal article 2015
- document
-
Mata Pavia, J. (author), Wolf, M. (author), Charbon, E. (author)Single-photon avalanche diode (SPAD) imagers typically have a relatively low fil factor, i.e. a low proportion of the pixel’s surface is light sensitive, due to in-pixel circuitry. We present a microlens array fabricated on a 128x128 single-photon avalanche diode (SPAD) imager to enhance its sensitivity. The benefit and limitations of these...journal article 2014
- document
-
A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technologyMandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...journal article 2012
- document
-
Karami, M.A. (author), Gersbach, M. (author), Yoon, H.J. (author), Charbon, E. (author)We report on the first implementation of a single-photon avalanche diode (SPAD) in 90nm complementary metal oxide semiconductor (CMOS) technology. The detector features an octagonal multiplication region and a guard ring to prevent premature edge breakdown using a standard mask set exclusively. The proposed structure emerged from a systematic...journal article 2010