Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore

Ionic FETs have enormous potential for energy conversion, sensing, and ionic circuits due to their efficient regulation of the nanochannel. Here ionic FETs based on single-crystal silicon nanopores and the rectification of the fabricated devices are studied. The electrical characterization results demonstrated that since the silicon-based...

Balanced ternary addition using a gated silicon nanowire

Ternary logic has the lowest cost of complexity, here, we demonstrate a CMOS hardware implementation of a ternary adder using a silicon metal-on-insulator single electron transistor. Gate dependent rectifying behavior of a single electron transistor (SET) results in a robust three-valued output as a function of the potential of the single...

Scaling of thermoelectric voltage induced by microwave radiation at the boundary between two dimensional electron systems