Effect of Passivation and Mechanical Constraint on Electromigration in Interconnect

In this paper, we apply the Eshelby's solution to study the effect of passivation layer on electromigration (EM) failure in a conductor. The passivation layer is considered as an elastic material, not a rigid layer anymore. Thus, the deformation and stress evolution in the conductor during EM are related to the mechanical property of the...

Effect of Thermomigration on Electromigration in SWEAT Structures

This paper investigates thermomigration (TM) and electromigration (EM) in SWEAT structure. Firstly, the distribution of temperature along SWEAT structure during EM is obtained by using finite element (FE) simulation. The FE simulation results show that the temperature is almost uniformly distributed in the most region of narrow line in SWEAT...

Implementation of Fully Coupled Electromigration Theory in COMSOL

In this paper, a 3D and fully coupled electromigration modeling is implemented using COMSOL. The fully coupled multi-physics theory has a unique set of partial differential equations, which cannot be directly simulated with the standard finite element software such as ABAQUS and ANSYS. With the weak form PDE modulus in COMSOL, the weak form of...

Implementation of General Coupling Model of Electromigration in ANSYS

In this paper, a recently developed theory - general coupling model of electromigration, is implemented in ANSYS. We first identify several errors provided in ANSYS manual for electromigration modeling. Then the general coupling model is implemented in ANSYS and the detailed description is presented. Finally, a 1-D confined metal line with a...

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In...