AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications

The rapid development and market growth of microelectronics technology continues to provide expanding connectivity, productivity, entertainment and well-being to billions of users globally. Moreover, continuous demand for more on-chip functionally presents an exciting opportunity for integration of various chemical sensors for monitoring...

Impact of high temperature H₂ pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂S detection

In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre...