Suspended AlGaN/GaN HEMT NO₂ Gas Sensor Integrated with Micro-heater

We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO₃) nano-film modified gate for nitrogen dioxide (NO₂) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...

Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater

A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H₂S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...

System in package (SiP) technology: Fundamentals, design and applications

Purpose: The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked silicon submount technology. As demonstrators, a smart lighting module and a sensor systems were successfully developed by using the fabrication and assembly process described in this paper. Design...

Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection

This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W_g/L_g from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...

Analyzing Protein Denaturation using Fast Differential Scanning Calorimetry

This paper investigates the possibility to measure protein denaturation with Fast Differential Scanning Calorimetry (FDSC). Cancer can be diagnosed by measuring protein denaturation in blood plasma using Differential Scanning Calorimetry (DSC). FDSC can reduce diagnosis time from hours to minutes, requiring significantly smaller sample...

Electro-thermal analysis of MEMS microhotplates for the optimization of temperature uniformity

This paper presents a microhotplate working up to 1200 °C with improved temperature uniformity by optimizing the geometry of the thin-film resistor. By varying the linewidth of meandering resistive tracks, heat is generated in such a way to have more homogenous temperature distribution. The microhotplates are fabricated using molybdenum as...

Temperature dependence of the resonance frequency of thermogravimetric devices

This paper investigates the temperature dependence of the resonance frequency of thermogravimetric (TG) devices for tip heating over the temperature range of View the MathML source 25–600?C. The resonance frequency of a fabricated TG device shows to be temperature independent for tip heating up to about View the MathML source600?C. This allows a...