Graphene based piezoresistive pressure sensor

We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying...

X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...