- document
-
Shi, Q. (author), Zudov, M. A. (author), Qian, Q. (author), Watson, J.D. (author), Manfra, M. J. (author)We investigate quantum Hall stripes under an in-plane magnetic field B in a variable-density two-dimensional electron gas. At filling factor ν=9/2, we observe one, two, and zero Binduced reorientations at low, intermediate, and high densities, respectively. The appearance of these distinct regimes is due to a strong density dependence of the...journal article 2017
- document
-
Fu, X. (author), Ebner, Q. A. (author), Shi, Q. (author), Zudov, M. A. (author), Qian, Q. (author), Watson, J.D. (author), Manfra, M. J. (author)We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass...journal article 2017
- document
-
Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...journal article 2015