Strategy to mitigate the dipole interfacial states in (i)a-Si:H/MoO_x passivating contacts solar cells

Molybdenum oxide (MoO_x) is attractive for applications as hole-selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoO_x stacked on intrinsic amorphous silicon (i)a-Si:H layer usually exhibits some issues that are still not fully...

Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22% efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al₂O...

High temperature oxidation pre-treatment of textured c-Si wafers passivated by a-Si:H

This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO ₃ which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...

High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Broadband transparent conductive oxide layers with high electron mobility (μ_e) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In₂O₃ thin films with high μ_e (>60 cm² V^-1 s^-1) have been extensively...