Impact of high temperature H₂ pre-treatment on Pt-AlGaN/GaN HEMT sensor for H₂S detection

In this paper, a method to extend the detection range of hydrogen sulfide (H₂S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H₂S exposure in dry air. A pre...

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design,...