Tunable visible emission and persistent luminescence of BaGa₂O₄:Cu²⁺

In the field of solid-state luminescence, Cu²⁺ has long been widely acknowledged for its capacity to emit infrared light. However, the occurrence of visible emission from Cu²⁺ ions had been infrequently observed and reported. In this study, we made an intriguing discovery by examining the behavior of Cu²⁺...

Red-Emitting SrGa₂O₄:Cu²⁺Phosphor with Super-Long Persistent Luminescence

The red afterglow of current rare-earth-activated long persistent luminescence (LPL) phosphors is largely still less than 6 h, in contrast to the 20 or 30 h long blue- or green-emitting ones, becoming the main obstacle to realize their multiscenario applications in practice. Herein, we report a rare-earth-free red-emitting LPL phosphor SrGa...

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...

AlGaN/GaN HEMT micro-sensor technology for gas sensing applications

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating in harsh environment conditions. In this work we present our recent developments on design,...