Searched for: author%3A%22Yang%2C+C.%22
(1 - 12 of 12)
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Yang, C. (author), Zhao, Y. (author), Huang, Lu (author), Xia, Liming (author), Tao, Q. (author)
Quantitative MRI (qMRI) of the heart has become an important clinical tool for examining myocardial tissue properties. Because heart is a moving object, it is usually imaged with electrocardiogram and respiratory gating during acquisition, to “freeze” its motion. In reality, gating is more-often-than-not imperfect given the heart rate...
conference paper 2022
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Zhao, Y. (author), Yang, C. (author), Schweidtmann, A.M. (author), Tao, Q. (author)
The self-configuring nnU-Net has achieved leading performance in a large range of medical image segmentation challenges. It is widely considered as the model of choice and a strong baseline for medical image segmentation. However, despite its extraordinary performance, nnU-Net does not supply a measure of uncertainty to indicate its possible...
conference paper 2022
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Yang, C. (author), van der Drift, E.W.J.M. (author), French, P.J. (author)
Reducing sensor dimension is a good way to increase system sensitivity and response. However the advantages gained must be weighed against other effects which also became significant during the scaling process. In this paper, the scaling effect of cantilever sensors from micrometre to nanometre regimes is reviewed. Changes in the physical...
review 2022
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Bargerbos, A. (author), Uilhoorn, W. (author), Yang, C. (author), Krogstrup, Peter (author), Kouwenhoven, Leo P. (author), de Lange, G. (author), van Heck, B. (author), Kou, A. (author)
Isolation from the environment determines the extent to which charge is confined on an island, which manifests as Coulomb oscillations, such as charge dispersion. We investigate the charge dispersion of a nanowire transmon hosting a quantum dot in the junction. We observe rapid suppression of the charge dispersion with increasing junction...
journal article 2020
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Pita-Vidal, Marta (author), Bargerbos, A. (author), Yang, C. (author), van Woerkom, D.J. (author), Pfaff, W. (author), Haider, S.N. (author), Krogstrup, Peter (author), Kouwenhoven, Leo P. (author), de Lange, G. (author), Kou, A. (author)
Hybrid superconducting circuits, which integrate nonsuperconducting elements into a circuit quantum electrodynamics (cQED) architecture, expand the possible applications of cQED. Building hybrid circuits that work in large magnetic fields presents even further possibilities, such as the probing of spin-polarized Andreev bound states and the...
journal article 2020
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Liles, S. D. (author), Li, R. (author), Yang, C. H. (author), Hudson, F. E. (author), Veldhorst, M. (author), Dzurak, Andrew S. (author), Hamilton, A. R. (author)
Valence band holes confined in silicon quantum dots are attracting significant attention for use as spin qubits. However, experimental studies of single-hole spins have been hindered by challenges in fabrication and stability of devices capable of confining a single hole. To fully utilize hole spins as qubits, it is crucial to have a detailed...
journal article 2018
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Ferdous, Rifat (author), Chan, Kok W. (author), Veldhorst, M. (author), Hwang, J. C.C. (author), Yang, C. H. (author), Sahasrabudhe, Harshad (author), Klimeck, Gerhard (author), Morello, Andrea (author), Dzurak, Andrew S. (author), Rahman, Rajib (author)
We identify the presence of monatomic steps at the Si/SiGe or Si/SiO2 interface as a dominant source of variations in the dephasing time of silicon (Si) quantum dot (QD) spin qubits. First, using atomistic tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our...
journal article 2018
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Yang, C. (author), Alves, A.D.C. (author), Van Donkelaar, J. (author), Thompson, S. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A.S. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...
journal article 2010
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Johnson, B.C. (author), Alves, A. (author), Van Donkelaar, J. (author), Thompson, S. (author), Yang, C. (author), Jamieson, D. (author), Verduijn, A. (author), Mol, J. (author), Tettamanzi, G. (author), Rogge, S. (author), Wacquez, R. (author), Vinet, M. (author), Dzurak, A. (author)
journal article 2010
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...
journal article 2010
document
Yang, C. (author)
conference paper 2006
document
Yang, C. (author)
conference paper 2000
Searched for: author%3A%22Yang%2C+C.%22
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